R8008ANX
Manufacturer:
Rohm Semiconductor
Mfr.Part #:
R8008ANX
Datasheet:
Description:
MOSFETs TO-220FP-3 Through Hole N-Channel number of channels:1 50 W 800 V Continuous Drain Current (ID):8 A 39 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 50 W |
| Number of Channels | 1 |
| Continuous Drain Current (ID) | 8 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 39 nC |
| Gate to Source Voltage (Vgs) | -30 V, 30 V |
| Drain to Source Breakdown Voltage (Vds) | 800 V |
| Gate to Source Threshold Voltage | 5 V |
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